Year: 2010
ISBN: 978-5-9963-0181-2
Pages: 240
Subject: Nanotechnology
Format: 145 õ 215 ìì
Cover: Hardcover
Series: Nanotechnology
The textbook deals with silicon nanoelectronics, which is interpreted as CMOSbased digital electronics with sub-100 nm nodes.
The following aspects are described in detail: elementary basics of quantum mechanics, physical kinetics and carrier transport; general trends of modern nanoelectronics (Moore’s Law, scaling principles and its physical limits, heat production and trade-offs of miniaturization); electrostatics of MOS structure; basic models of I-V characteristics; carrier transport in channels, mobility, short- and narrow channel effects, DIBL, etc.; strong electric field effects in the FET channel including hot electron and impact ionization; original physics-based diffusion-drift model based on analytical solution of current continuity equation and capable to describe I-V characteristics of MOSFET in all operation regimes in a unifying manner and many others.
The book is intended for pre- and postgraduate students, as well as for practicing engineers involved in research in electronics industry.
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