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The book analyzes the impact of ionizing radiation (IR), mainly of outer space, on micro- and nanoelectronics products’ characteristics. The authors consider the basics of the IR-semiconductors interactions physics, the change of device structures electrophysical parameters due to the formation of nanoscale defects under the IR action; ionizing dose effects in the structure of Si/SiO2 and their influence on the devices and circuits characteristics, single events in the products of micro- and nanoelectronics under the influence of individual charged particles, etc.

The book is intended for technical professionals working in the field of electronics, as well as undergraduate and graduate students.